@Article{FornariRappMoreAbra:2016:StPrBi,
               author = "Fornari, Celso Israel and Rappl, Paulo Henrique de Oliveira and 
                         Morelh{\~a}o, S{\'e}rgio L. and Abramof, Eduardo",
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Universidade de 
                         S{\~a}o Paulo (USP)} and {Instituto Nacional de Pesquisas 
                         Espaciais (INPE)}",
                title = "Structural properties of Bi2Te3 topological insulator thin films 
                         grown by molecular beam epitaxy on (111) BaF2 substrates",
              journal = "Journal of Applied Physics",
                 year = "2016",
               volume = "119",
               number = "16",
                pages = "165303",
                month = "Apr.",
             abstract = "Structural properties of topological insulator bismuth telluride 
                         films grown epitaxially on (111) BaF2 with a fixed Bi2Te3 beam 
                         flux were systematically investigated as a function of substrate 
                         temperature and additional Te flux. A layer-by-layer growth mode 
                         is observed since the early stages of epitaxy and remains 
                         throughout the whole deposition. Composition of the epitaxial 
                         films produced here stays between Bi2Te3 and Bi4Te5, as determined 
                         from the comparison of the measured x-ray diffraction curves with 
                         calculations. The substrate temperature region, where the growth 
                         rate remains constant, is found to be the most appropriate to 
                         obtain ordered Bi2Te3 films. Line width of the L = 18 Bi2Te3 
                         diffraction peaks as low as 140 arcsec was obtained, indicating 
                         high crystalline quality. Twinning domains density rises with 
                         increasing growth temperature and reducing Te extra flux. X-ray 
                         reflectivity curves of pure Bi2Te3 films with thickness from 165 
                         to 8 nm exhibited well defined interference fringes, evidencing 
                         homogeneous layers with smooth surface. Our results demonstrate 
                         that Bi2Te3 films with very well controlled structural parameters 
                         can be obtained. High structural quality Bi2Te3 films as thin as 
                         only eight quintuple layers grown here are promising candidates 
                         for intrinsic topological insulator.",
                  doi = "10.1063/1.4947266",
                  url = "http://dx.doi.org/10.1063/1.4947266",
                 issn = "0021-8979",
             language = "en",
           targetfile = "fornari_structural.pdf",
        urlaccessdate = "27 abr. 2024"
}